SI5936DU-T1-GE3

Overview

The Vishay Siliconix SI5936DU-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a PowerPAK ChipFET package with a 0.8 mm profile and a 3.0 mm x 1.9 mm footprint. The device supports a drain-source voltage of 30 V and a continuous drain current of 6 A. On-resistance is specified at 0.030 Ω (VGS = 10 V, ID = 5 A) and 0.040 Ω (VGS = 4.5 V, ID = 4 A). Total gate charge is typically 3.5 nC at VGS = 4.5 V. Maximum power dissipation reaches 10.4 W at TC = 25 °C. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• TrenchFET power MOSFET architecture for low on-resistance
• Thermally enhanced leadless PowerPAK ChipFET package
• Thin 0.8 mm profile with small footprint area

Applications

• Network systems
• System power DC/DC converters

Procurement Notes

Verify the component against official Vishay datasheet document number 62804. Confirm the marking code CF matches the physical device. Ensure the ordering suffix -T1-GE3 corresponds to the lead-free and halogen-free PowerPAK ChipFET configuration. Validate that the specific lot meets material categorization compliance requirements as defined by the manufacturer.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage applications. The 30 V rating and 6 A current capability suit system power management tasks. The thin 0.8 mm profile facilitates space-constrained designs. Verify thermal performance against the 105 °C/W junction-to-ambient resistance if heatsinking is not utilized.

Part Context

This part belongs to the Vishay Siliconix PowerPAK ChipFET family. It integrates two independent N-channel MOSFETs into a single surface-mount package. The design emphasizes thermal efficiency and minimal board space usage compared to traditional packages.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.