SI5944DU-T1-GE3

Overview

The Vishay Siliconix SI5944DU-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and operates within a -55 °C to +150 °C junction temperature range. The device is housed in a leadless PowerPAK ChipFET Dual 8 package with a 0.8 mm profile. At VGS = 10 V, the maximum on-state resistance is 0.112 Ω, supporting up to 6 A continuous drain current at TC = 25 °C. Total gate charge is typically 4.4 nC at VGS = 10 V.

Feature Summary

• Dual N-channel configuration integrating two independent transistors in a single compact footprint.
• TrenchFET power MOSFET architecture designed for low on-resistance and high efficiency.
• PowerPAK ChipFET Dual 8 package provides a thin 0.8 mm profile with small surface area.
• Lead-free and halogen-free construction compliant with RoHS standards.

Applications

• DC-DC power supply circuits
• Low voltage synchronous rectification
• Load switching applications

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the presence of the 'CC XXX' marking code and date lot traceability on the package. Ensure the ordering suffix matches the specified lead-free and halogen-free requirements. Validate datasheet revision B specifications against the delivered hardware batch.

Selection Notes

Select this component for designs requiring dual N-channel isolation in a minimal space-constrained layout. Evaluate thermal management capabilities based on the 62 °C/W junction-to-ambient resistance when operating without heatsinking. Verify that the 40 V breakdown voltage accommodates system transients and that the 0.112 Ω on-resistance meets conduction loss targets at the intended load currents.

Part Context

This part belongs to the Vishay Siliconix Si5944DU series of dual N-channel MOSFETs. It utilizes the PowerPAK ChipFET Dual 8 package, which is distinct from standard SOIC or QFN footprints due to its leadless design. The product line emphasizes low profile and enhanced thermal performance for portable electronics.

Replacement Considerations

Consult official Vishay documentation for qualified alternatives. Cross-referencing requires matching the dual N-channel topology, 40 V rating, and PowerPAK ChipFET Dual 8 package dimensions to ensure mechanical compatibility.

FAQ

What is the maximum junction temperature for the SI5944DU?

The maximum operating junction temperature is 150 °C.

How does the package design affect soldering?

The PowerPAK ChipFET is a leadless package where the terminal ends are exposed copper. Manual soldering with an iron is not recommended, and a solder fillet at the exposed tip is not required for adequate connection.

What is the typical total gate charge at VGS = 10 V?

The typical total gate charge (Qg) is 4.4 nC when tested at VDS = 20 V, VGS = 10 V, and ID = 3.3 A.