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The SI5975DC-T1-E3 is a dual N-channel MOSFET manufactured by Vishay Siliconix, housed in an 8-lead ChipFET package. It features a drain-source voltage rating of 20 V and a continuous drain current of 6.0 A at 25°C. The device utilizes TrenchFET technology to achieve a low on-resistance of 6.2 mΩ at a gate-source voltage of 4.5 V. Designed for surface-mount applications, it operates within a temperature range of -55°C to +150°C junction temperature.
This component belongs to the SI59xx series of dual MOSFETs from Vishay Siliconix. These devices are engineered for high-density PCB layouts where space constraints are critical. The ChipFET package provides thermal efficiency and mechanical stability for automated assembly processes.
Verify pinout compatibility and electrical ratings when substituting. Check datasheets for equivalent packages such as SO-8 or similar dual MOSFET configurations with matching Vds and Rds(on) specifications.