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The SI6544BDQ-T1-E3 is a P-channel power MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features an 8-lead TSSOP surface-mount package and operates with a drain-source voltage of -20V and a continuous drain current of -7.9A at 25°C. The device exhibits a maximum on-resistance of 10 milliohms at a gate-source voltage of -10V. Key electrical parameters include a gate charge of 12nC at 10V and a threshold voltage ranging from 0.4V to 2.5V. The component supports a junction temperature up to 175°C and complies with RoHS standards.
This component is officially listed as obsolete or end-of-life by the manufacturer. Verification of availability requires checking authorized distributors for remaining stock or surplus channels. Engineers must confirm the specific obsolescence date and lead time constraints before initiating procurement processes to ensure supply continuity.
Designers should evaluate alternative components within the same Vishay series that offer similar electrical specifications and pin compatibility. Verify that replacement parts maintain the required thermal resistance and package dimensions to fit existing footprints without redesigning the printed circuit board layout.
This part belongs to the Vishay Siliconix TrenchFET family, designed for efficient power switching in compact form factors. The TSSOP-8 package provides a balance between thermal dissipation capabilities and space efficiency for modern electronic assemblies.
Consult official datasheets for cross-reference recommendations from Vishay. Ensure any substitute device matches the -20V rating, -7.9A current capacity, and 10mΩ on-resistance requirements.