ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.7A 8TSSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.7A, 3.8A
- Rds On (Max) @ Id, Vgs：43mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
Download product information
Overview
The SI6544BDQ-T1-GE3 is a dual N-channel and P-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an 8-pin TSSOP surface-mount package. The device features a drain-source voltage rating of -20V for the N-channel and 12V for the P-channel configuration. It supports gate-source voltages up to ±20V and operates within a junction temperature range of -55°C to +150°C. The component is RoHS compliant and part of the SI6 series, designed for general-purpose switching applications requiring complementary channel integration.
Feature Summary
- Integrates complementary N-channel and P-channel transistors into a single compact package
- Utilizes advanced TrenchFET process technology for optimized performance
- Supports surface-mount installation via standard TSSOP-8 footprint
Applications
- Low-side and high-side switching circuits
- DC-DC converter output stages
- Load switch implementations
Procurement Notes
Verify the specific suffix against official manufacturer documentation, as ordering codes may vary. Confirm current lifecycle status directly with Vishay Semiconductors prior to design finalization. Ensure compliance requirements match project specifications. Cross-reference datasheet revisions to validate electrical parameters. Consult authorized distributors for availability confirmation.
Selection Notes
Evaluate thermal resistance characteristics relative to the intended PCB copper area. Verify that the required current handling exceeds the maximum continuous drain current limits under operating conditions. Check compatibility with control logic voltage levels against the specified gate threshold values. Assess package thermal dissipation capabilities for the target power environment.
Part Context
This component belongs to the Vishay SI6 series of dual MOSFETs. These devices are engineered to provide space-saving solutions for designs requiring both N-type and P-type switching elements. The TSSOP-8 packaging allows for automated assembly while maintaining electrical isolation between channels within the shared substrate structure.
Replacement Considerations
SI6544BDQ-E3 is listed as an alias for this component. Verify pinout compatibility and parameter equivalence before substitution. Consult official replacement guides for confirmed alternatives.
