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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 5.7A 8TSSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
- Rds On (Max) @ Id, Vgs：22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V, 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：850pF @ 10V, 1200pF @ 10V
- Power - Max：1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI6562CDQ-T1-BE3 is a dual MOSFET in a TSSOP-8 package, containing one N-channel and one P-channel device. It utilizes TrenchFET technology with a 20 V drain-source voltage rating. The N-channel variant offers a maximum on-resistance of 0.022 Ω at VGS = 4.5 V and a continuous drain current of 6.7 A. The P-channel variant provides a maximum on-resistance of 0.030 Ω at VGS = -4.5 V and a continuous drain current of 6.1 A. Both channels operate within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Dual configuration integrating complementary N-channel and P-channel power MOSFETs into a single surface-mount component.
- TrenchFET architecture designed to achieve low on-state resistance for efficient power switching.
- Halogen-free construction compliant with environmental standards.
Applications
- Load Switch
- DC/DC Converter
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation before procurement. Confirm that the BE3 designation aligns with the required lead-free and halogen-free specifications. Cross-reference the datasheet revision date to ensure compatibility with current manufacturing processes and quality standards.
Selection Notes
Select this component when space-constrained designs require both high-side and low-side switching capabilities within a standard TSSOP-8 footprint. Evaluate thermal performance requirements against the specified junction-to-ambient resistance ratings. Ensure gate drive voltages remain within the absolute maximum ratings to prevent dielectric breakdown.
Part Context
This part belongs to the Vishay LITTLE FOOT series of power MOSFETs. The series is characterized by utilizing custom leadframes within standard integrated circuit packages to provide enhanced thermal dissipation while maintaining a reduced physical footprint compared to traditional SOIC packages.
Replacement Considerations
The Si6562CDQ-T1-GE3 is documented as the lead-free and halogen-free alternative to this product line. Verify pinout compatibility and electrical parameter equivalence before substituting components in existing designs.
