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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 8TSSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：30mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id：600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The SI6562DQ-T1-E3 is a complementary N- and P-channel MOSFET pair manufactured by Vishay Siliconix using TrenchFET technology. It is housed in an 8-TSSOP surface-mount package with a maximum drain-source voltage of 20V for both channels. The N-channel provides a continuous drain current of 6.7A, while the P-channel offers 6.1A at 25°C. Both devices feature a low gate threshold voltage of 1.5V maximum at 250µA and a maximum gate charge of 23nC at 10V. The unit supports an operating temperature range from -55°C to +150°C junction temperature.
Feature Summary
- Complementary N-Channel and P-Channel configuration in a single package
- TrenchFET power FET technology for optimized performance
- Logic-level gate drive capability with low threshold voltage
Applications
- Low-side and high-side switching applications
- DC-DC converter synchronous rectification
- Power management circuits requiring compact dual-FET solutions
Procurement Notes
Verify the specific suffix against official Vishay documentation to confirm exact electrical tolerances and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's current product change notices. Ensure the 8-TSSOP footprint matches the target PCB design constraints before finalizing component selection.
Selection Notes
Select this component when a matched N/P pair is required for synchronous rectification or half-bridge drivers within a 20V system. The 8-TSSOP package suits space-constrained designs. Verify that the 6.7A and 6.1A current ratings align with the thermal management capabilities of the intended application environment.
Part Context
This part belongs to the Vishay SI6 series of TrenchFET MOSFETs, designed for general-purpose switching applications. The 'E3' suffix indicates lead-free and halogen-free construction compliant with RoHS standards. It serves as a discrete solution for power stages where integrated driver ICs are not utilized.
Replacement Considerations
Consult Vishay datasheets for direct pin-compatible alternatives within the SI65xx family. Verify that any substitute maintains the 20V Vds rating and comparable Rds(on) values to ensure circuit performance parity.
