SI6562DQ-T1-GE3

SI6562DQ-T1-GE3

$1.16
  • Description:MOSFET N/P-CH 20V 8TSSOP
  • Series:TrenchFET®

SKU:446f6c25e86c Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 20V 8TSSOP
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:30mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id:600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs:25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1W
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

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SI6562DQ-T1-GE3

Part Context

The SI6562DQ-T1-GE3 is a P-channel MOSFET from the Vishay Siliconix portfolio, designed for surface-mount applications. It utilizes TrenchFET technology to achieve low on-resistance within a compact SC-70-6 package. This component serves as a power switching element in portable electronics and battery management systems where space efficiency and thermal performance are critical constraints.

SI6562DQ-T1-GE3SI6562DQ-T1-GE3
$1.16
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