SI6913DQ-T1-BE3

Overview

The Vishay Siliconix SI6913DQ-T1-BE3 is a dual P-Channel MOSFET utilizing TrenchFET technology, housed in an 8-pin TSSOP package. It features a -12 V drain-source voltage rating and a maximum continuous drain current of -5.8 A at 25 °C. The on-state resistance is specified as 0.021 Ω at VGS = -4.5 V, 0.028 Ω at VGS = -2.5 V, and 0.037 Ω at VGS = -1.8 V. The device supports a maximum power dissipation of 1.14 W at 25 °C and operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Dual P-Channel configuration with independent gate control for each channel.

Applications

• Load Switch
• Battery Switch

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance attributes. The BE3 suffix indicates lead-free status, while other variants like E3 or GE3 may differ in halogen content. Confirm that the component matches the exact datasheet revision required for your design specifications before finalizing procurement.

Selection Notes

Evaluate the thermal requirements carefully, as the TSSOP-8 package has a steady-state junction-to-ambient thermal resistance of up to 150 °C/W. Ensure adequate copper spreading on the PCB drain pads to manage heat dissipation effectively. Verify that the gate drive voltage meets the minimum threshold for the desired on-resistance performance.

Part Context

This component belongs to the Vishay LITTLE FOOT series of surface-mount power MOSFETs. The TSSOP-8 package provides a smaller footprint and lower profile compared to traditional SOIC packages, making it suitable for space-constrained applications such as PCMCIA cards and portable electronics.

Replacement Considerations

Check for direct equivalents within the same product family, such as single-channel variants if only one side is utilized. Ensure any replacement maintains the -12 V rating and compatible pinout configuration for the TSSOP-8 package.