ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 12V 4.9A 8TSSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：4.9A
- Rds On (Max) @ Id, Vgs：21mOhm @ 5.8A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 400µA
- Gate Charge (Qg) (Max) @ Vgs：28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
Download product information
Overview
The Vishay Siliconix SI6913DQ-T1-E3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in an 8-pin TSSOP surface-mount package. It features a drain-source voltage rating of -12 V and a continuous drain current of -5.8 A at 25 °C. The device exhibits a maximum on-state resistance of 0.021 Ω at VGS = -4.5 V and -5.8 A. Gate-source voltage limits are ±8 V, with a gate charge of 28 nC typical. Operating junction temperatures range from -55 °C to +150 °C, and the maximum power dissipation is 1.14 W at 25 °C.
Feature Summary
- Dual P-Channel Configuration
- TrenchFET Power MOSFET Technology
- Surface-Mounted TSSOP-8 Package
Applications
- Load Switch
- Battery Switch
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status using official documentation. Validate datasheet revision against the specific manufacturing batch. Ensure storage conditions align with semiconductor handling standards to prevent moisture sensitivity issues prior to assembly.
Selection Notes
Evaluate thermal management requirements based on the specified junction-to-ambient resistance ratings. Verify that the driving circuit provides sufficient gate-source voltage to achieve the desired low on-resistance levels. Consider the physical footprint constraints of the TSSOP-8 package relative to available board space. Assess peak current demands against the pulsed drain current capabilities defined in the absolute maximum ratings.
Part Context
This component belongs to the Vishay Siliconix TrenchFET family, designed for efficient power switching in compact form factors. The dual configuration allows for independent control of two channels within a single small outline package. It serves as a modern alternative to larger legacy packages while maintaining robust electrical performance for portable and industrial applications.
Replacement Considerations
The Si6913DQ-T1-GE3 is a lead-free and halogen-free variant of this component. Verify pinout compatibility and electrical specifications before substituting with other dual P-channel MOSFETs in the same voltage class.
