SI6924AEDQ-T1-GE3

SI6924AEDQ-T1-GE3

$1.29
  • Description:MOSFET 2N-CH 28V 4.1A 8TSSOP
  • Series:-

SKU:5200296a9387 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 28V 4.1A 8TSSOP
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):28V
  • Current - Continuous Drain (Id) @ 25°C:4.1A
  • Rds On (Max) @ Id, Vgs:33mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

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SI6924AEDQ-T1-GE3

Replacement Considerations

The SI6924AEDQ-T1-GE3 is functionally compatible with the SI6926AEDQ-T1-GE3. Both components belong to the same Vishay Siliconix series and utilize identical TrenchFET technology within the same package configuration, allowing for potential substitution in designs where specific parameter variances are acceptable.

SI6924AEDQ-T1-GE3SI6924AEDQ-T1-GE3
$1.29
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