SI6925ADQ-T1-GE3

Overview

The SI6925ADQ-T1-GE3 is a dual N-channel Power MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a TSSOP-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 4.5 A. Its maximum on-resistance (Rds(on)) is specified at 30 mΩ, with a gate-source voltage range of ±8 V and a threshold voltage (Vgs(th)) of 400 mV. The total gate charge (Qg) is 10.5 nC. It operates within a temperature range of -55 °C to +150 °C and has a power dissipation rating of 1 W.

Feature Summary

• Dual channel configuration for integrated circuit solutions
• TrenchFET technology for optimized performance
• Low on-resistance for efficient power handling

Applications

• Power management circuits
• Load switching applications
• DC-DC converter output stages

Procurement Notes

Verify the specific suffix 'GE3' against the manufacturer's datasheet to confirm lead-free compliance and RoHS status. Confirm availability as this component may be subject to discontinuation or lifecycle changes. Ensure the TSSOP-8 footprint matches the target PCB design requirements before procurement.

Selection Notes

Select this component when a dual N-channel configuration is required in a compact TSSOP-8 package. The 20 V rating suits low-voltage DC bus applications. Verify that the 4.5 A current capability and 1 W thermal dissipation meet the system's peak load and thermal constraints under expected operating conditions.

Part Context

This part belongs to the Vishay SI6 series of TrenchFET MOSFETs. It is designed for space-constrained applications requiring dual switches. The TSSOP-8 package provides a balance between thermal performance and board area efficiency compared to larger packages.

Replacement Considerations

Check for direct pin-compatible alternatives within the same Vishay family. Verify that any substitute maintains the 20 V Vds, dual N-channel topology, and TSSOP-8 package dimensions.