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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4.1A 8TSSOP
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.1A (Ta)
- Rds On (Max) @ Id, Vgs：30mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix Si6926ADQ is a dual N-channel MOSFET housed in a TSSOP-8 package. It features a drain-source voltage (VDS) of 20 V and a gate-source voltage (VGS) rating of ±8 V. The device supports a continuous drain current (ID) of 4.5 A at 25 °C, with a maximum junction temperature range of -55 to +150 °C. On-state resistance (RDS(on)) varies from 0.030 Ω at VGS = 4.5 V to 0.043 Ω at VGS = 1.8 V. Total gate charge (Qg) is typically 10.5 nC, and forward transconductance (gfs) reaches 26 S.
Feature Summary
- Dual N-channel configuration within a compact TSSOP-8 surface-mount package
- Optimized for low-voltage logic-level operation with enhanced gate drive characteristics
- Designed for high-density applications requiring reduced board footprint and thermal efficiency
Applications
- Battery-powered portable devices
- Low-voltage load switching circuits
- Power management modules for mobile electronics
Procurement Notes
Verify the specific ordering suffix against official documentation, as variants such as GE3 indicate lead-free and halogen-free compliance. Confirm RoHS status and manufacturing origin through authorized distributors. Ensure component authenticity by checking datasheet revision numbers and manufacturer markings prior to integration into production workflows.
Selection Notes
Select this component for designs requiring dual N-channel isolation in a minimal footprint. Evaluate RDS(on) performance at the specific gate drive voltage intended for the application, as resistance increases significantly below 2.5 V. Consider thermal dissipation requirements relative to the 125 °C/W junction-to-ambient rating under steady-state conditions on FR-4 substrates.
Part Context
This part belongs to Vishay's LITTLE FOOT series, which utilizes custom leadframes within standard IC packages to achieve power handling capabilities comparable to larger SOIC devices while maintaining a smaller physical profile. The Si6926ADQ specifically targets markets demanding space-constrained solutions for low-voltage power switching.
Replacement Considerations
Direct substitutes include SI6926ADQ-T1-GE3, which shares identical electrical specifications but carries lead-free and halogen-free certifications. Verify pinout compatibility and thermal resistance ratings when considering alternative dual N-channel MOSFETs in TSSOP-8 packages.
