SI6926ADQ-T1-E3

Overview

The Vishay Siliconix SI6926ADQ-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and operates within a -55 °C to +150 °C junction temperature range. The device provides a maximum continuous drain current of 4.5 A at 25 °C, with an on-state resistance of 0.030 Ω at VGS = 4.5 V. Packaged in a surface-mount TSSOP-8 configuration, it includes two independent channels designed for low-profile power applications.

Feature Summary

• Dual N-channel architecture housed in a compact TSSOP-8 package
• TrenchFET technology for optimized on-resistance performance
• Halogen-free construction compliant with RoHS standards

Applications

• Low-profile power management circuits
• Battery-powered portable devices
• DC-DC converter output stages

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status and halogen-free compliance. Confirm that the TSSOP-8 package dimensions align with the target PCB footprint requirements. Ensure thermal design accounts for the specified junction-to-ambient resistance values under steady-state conditions.

Selection Notes

Select this component when a dual N-channel configuration is required in a small form factor. Evaluate the 0.030 Ω on-resistance against the expected load current to ensure acceptable conduction losses. Verify that the 20 V breakdown voltage exceeds the maximum circuit operating voltage with adequate safety margin.

Part Context

This part belongs to the Si6926ADQ series from Vishay Siliconix. It represents a dual-channel variant of their TrenchFET MOSFET lineup, specifically engineered for applications demanding reduced board space while maintaining robust power handling capabilities in a standard IC-style package.

Replacement Considerations

Direct replacements must match the dual N-channel topology, 20 V rating, and TSSOP-8 package. Verify equivalent on-resistance and thermal characteristics before substitution.