SI6928DQ-T1-E3

Overview

The SI6928DQ-T1-E3 is a P-channel enhancement mode field-effect transistor manufactured by Vishay Siliconix. It features an 8-pin DFN package designed for surface-mount applications. The device operates with a drain-source voltage of -20 V and a continuous drain current of -5.4 A at room temperature. Key electrical characteristics include a maximum on-resistance of 33 milliohms at a gate-source voltage of -4.5 V. The component utilizes silicon gate technology, ensuring fast switching speeds and high input impedance. It is optimized for low thermal resistance to facilitate efficient heat dissipation in compact circuit designs.

Feature Summary

• P-channel enhancement mode construction for complementary switching applications
• Low on-resistance design to minimize conduction losses
• Surface-mount DFN package for space-constrained layouts
• Silicon gate technology for reliable switching performance

Applications

• DC-DC converter synchronous rectification
• Load switch circuits for portable electronics
• Power management units in mobile devices
• Battery protection circuits

Procurement Notes

Verify the exact part number against official Vishay documentation to confirm the suffix indicates the RoHS-compliant variant. Ensure the ordering code matches the specific tape and reel configuration required for automated assembly processes. Cross-reference the datasheet revision date to confirm the latest electrical specifications are being utilized for design validation.

Selection Notes

Select this component when a P-channel MOSFET with low RDS(on) is required for -20 V systems. Evaluate the thermal performance requirements against the package's thermal resistance capabilities. Confirm that the gate drive voltage levels are compatible with the specified threshold voltages for optimal switching efficiency in the target application environment.

Part Context

This component belongs to the Vishay Siliconix family of small signal MOSFETs. It is designed as a complement to N-channel devices in bridge configurations. The DFN package provides a compact footprint suitable for modern consumer electronics. It serves as a standard solution for power switching tasks where size and efficiency are critical constraints.

Replacement Considerations

Check for direct pin-compatible alternatives from Vishay or other manufacturers with matching -20 V rating and similar RDS(on). Verify that substitute packages maintain equivalent thermal characteristics. Ensure gate charge parameters align with the existing driver circuitry to prevent switching speed degradation.