SI6954ADQ-T1-E3

Overview

The Vishay Siliconix Si6954ADQ-T1-E3 is a dual N-channel Power MOSFET utilizing TrenchFET technology, housed in a surface-mount TSSOP-8 package. It features a drain-source voltage rating of 30 V and a continuous drain current of 3.4 A at 25 °C. The device exhibits a maximum on-state resistance of 0.053 Ω at VGS = 10 V and 0.075 Ω at VGS = 4.5 V. Key dynamic parameters include a total gate charge of 8 nC, turn-on delay time of 12 ns, rise time of 10 ns, turn-off delay time of 23 ns, and fall time of 8 ns. Thermal ratings specify a junction-to-ambient resistance of 125 °C/W steady state.

Feature Summary

• Dual N-channel configuration within a compact TSSOP-8 footprint
• TrenchFET power architecture for low on-resistance performance
• Designed for battery switching applications with 2.5 V gate threshold capability

Applications

• Battery switch circuits
• Power management in small form factor devices
• PCMCIA cards and portable electronics

Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm lead-free status and halogen-free compliance. Confirm availability as distribution channels may list this component as obsolete or end-of-life. Ensure the procurement source provides valid RoHS certificates matching the E3 designation.

Selection Notes

Select this component when a dual N-channel MOSFET is required in a TSSOP-8 package with a 30 V rating. Evaluate thermal requirements carefully, as the junction-to-ambient resistance is relatively high compared to larger packages. Verify that the application gate drive voltage supports the specified RDS(on) thresholds of 4.5 V or 10 V for optimal conduction efficiency.

Part Context

This part belongs to the Vishay LITTLE FOOT series, which adapts standard IC packages like TSSOP-8 for power MOSFET applications. The series focuses on reducing board area while maintaining adequate power handling through custom leadframes. The Si6954ADQ specifically integrates two N-channel dies into one package to save space in dense layouts.

Replacement Considerations

Si6954ADQ-T1-GE3

FAQ

What is the typical total gate charge (Qg) for the Si6954ADQ?

The typical total gate charge is 8 nC, measured under conditions of VDS = 10 V, VGS = 10 V, and ID = 3.4 A.

How does the on-state resistance vary with gate voltage?

The maximum RDS(on) is 0.053 Ω at VGS = 10 V and increases to 0.075 Ω at VGS = 4.5 V.

What are the switching times for this device?

The turn-on delay time is typically 12 ns, rise time is 10 ns, turn-off delay time is 23 ns, and fall time is 8 ns.