SI6963BDQ-T1-GE3

Overview

The SI6963BDQ-T1-GE3 is a dual P-channel MOSFET manufactured by Vishay Siliconix. It features a 20V drain-source voltage and an 8V gate-source voltage rating. The device specifies conduction at a gate-to-source voltage of 2.5V, supporting a continuous drain current of 3.4A. It utilizes an 8-TSSOP surface-mount package with a maximum power dissipation of 830mW. The component is lead-free and halogen-free compliant.

Feature Summary

• Dual P-channel configuration in a single compact package
• Optimized for low-voltage logic control applications
• Surface-mount design suitable for automated assembly

Applications

• Low-voltage load switching circuits
• Battery protection modules
• Portable electronic device power management

Procurement Notes

Verify the obsolete status and end-of-life designation before finalizing designs. Confirm that the 8-TSSOP footprint matches the target PCB layout. Ensure the 2.5V gate threshold specification meets the system's logic level requirements. Check for RoHS compliance documentation to meet environmental standards. Validate thermal performance within the 830mW dissipation limit during operation.

Selection Notes

Select this component for applications requiring dual P-channel switching in a minimal footprint. The 2.5V gate specification enables compatibility with low-voltage microcontrollers. Consider the 8-TSSOP package constraints for thermal management. Evaluate the 3.4A current capacity against peak load demands. Compare alternative dual MOSFETs if higher voltage ratings are necessary.

Part Context

This part belongs to the PowerTrench family of MOSFETs from Vishay Siliconix. It represents a dual-channel solution designed to save board space compared to discrete components. The technology focuses on efficient switching for portable electronics. The T1 suffix indicates tape and reel packaging for high-volume manufacturing.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source data.