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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3.8A 8TSSOP
- Series：PowerTrench®
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
- Rds On (Max) @ Id, Vgs：43mOhm @ 3.8A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1015pF @ 10V
- Power - Max：600mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The SI6963DQ is a dual P-channel MOSFET manufactured by onsemi, housed in an 8-lead TSSOP package. It features a drain-source breakdown voltage of 20 V and supports continuous drain currents up to 3.8 A. The device exhibits a low on-resistance of 36 mΩ at specified gate drive conditions. Operating temperatures range from -55°C to +150°C junction temperature, with power dissipation rated at 1 W. Switching characteristics include rise and fall times of 18 ns and 34 ns respectively.
Feature Summary
- Dual P-channel configuration for efficient high-side switching applications
- Low on-resistance design minimizes conduction losses
- Enhancement mode operation compatible with standard logic levels
- Robust thermal performance suitable for demanding environments
Applications
- Power management circuits requiring dual high-side control
- Battery protection systems utilizing P-channel topology
- Load switch implementations in portable electronics
- Motor driver pre-driver stages for DC motors
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to obsolete status. Confirm RoHS compliance documentation matches specific manufacturing lot requirements. Validate datasheet revisions against current engineering specifications before integration into new designs.
Selection Notes
Evaluate thermal resistance parameters relative to PCB copper area constraints. Ensure gate drive voltage remains within the specified ±12 V limits to prevent oxide degradation. Consider parasitic inductance effects in high-frequency switching layouts given the fast rise and fall times inherent to this package type.
Part Context
This component belongs to the broader family of dual MOSFET arrays designed for compact power switching solutions. While originally associated with Fairchild Semiconductor technology lines, current production and documentation are managed by onsemi following industry consolidation. The TSSOP-8 form factor provides space-efficient mounting for dense circuit board architectures.
Replacement Considerations
Public confirmed substitute part numbers: FDQ7236AS (N-channel alternative), STL42P6LLF6 (single P-channel). Verify pin compatibility and electrical ratings carefully when substituting across channel types.
