SI6968BEDQ-T1-E3

SI6968BEDQ-T1-E3

$1.64
  • Description:MOSFET 2N-CH 20V 5.2A 8TSSOP
  • Series:TrenchFET®

SKU:10f065cc9790 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 5.2A 8TSSOP
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:5.2A
  • Rds On (Max) @ Id, Vgs:22mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id:1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

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SI6968BEDQ-T1-E3

Overview

The SI6968BEDQ-T1-E3 is a dual N-channel MOSFET in a TSSOP-8 package. It features a drain-source voltage of 20 V and a continuous drain current of 5.2 A at 25 °C. The maximum on-state resistance is 22 mΩ at VGS = 4.5 V and ID = 6.5 A, or 30 mΩ at VGS = 2.5 V. Total gate charge is typically 12 nC. Maximum power dissipation is 1 W at 25 °C. The device includes built-in ESD protection rated at 3000 V and operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

  • Dual N-channel configuration with common drain topology
  • Integrated electrostatic discharge protection rated at 3000 V
  • TrenchFET technology for low on-resistance performance

Applications

  • Low-voltage load switching applications
  • Power management circuits requiring small form factors
  • Battery-powered portable devices

Procurement Notes

Verify the component against official Vishay Siliconix datasheet specifications before integration. Confirm that the TSSOP-8 package dimensions and pinout align with the target PCB layout. Ensure thermal design accounts for the specified junction-to-ambient resistance values under expected operating conditions.

Selection Notes

Select this component for designs requiring a compact dual N-channel solution with integrated ESD protection. Evaluate the 20 V rating and 22 mΩ on-resistance against circuit requirements. Consider the TSSOP-8 footprint constraints and thermal dissipation capabilities relative to the application's power handling needs.

Part Context

This part belongs to the LITTLE FOOT series of surface-mount power MOSFETs by Vishay Siliconix. The series utilizes standard IC packages modified with custom leadframes to provide high-density power switching in minimal board space. The SI6968BEDQ variant specifically offers dual channels in an 8-pin thin-shrink small-outline package.

Replacement Considerations

Check for direct equivalents such as the SI6968BDQ if halogen-free status is not required. Verify pin compatibility and electrical parameters when substituting with other dual N-channel MOSFETs in TSSOP-8 packages.

SI6968BEDQ-T1-E3SI6968BEDQ-T1-E3
$1.64
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