SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SI6968BEDQ-T1-E3 is a dual N-channel MOSFET in a TSSOP-8 package. It features a drain-source voltage of 20 V and a continuous drain current of 5.2 A at 25 °C. The maximum on-state resistance is 22 mΩ at VGS = 4.5 V and ID = 6.5 A, or 30 mΩ at VGS = 2.5 V. Total gate charge is typically 12 nC. Maximum power dissipation is 1 W at 25 °C. The device includes built-in ESD protection rated at 3000 V and operates within a junction temperature range of -55 °C to +150 °C.
Verify the component against official Vishay Siliconix datasheet specifications before integration. Confirm that the TSSOP-8 package dimensions and pinout align with the target PCB layout. Ensure thermal design accounts for the specified junction-to-ambient resistance values under expected operating conditions.
Select this component for designs requiring a compact dual N-channel solution with integrated ESD protection. Evaluate the 20 V rating and 22 mΩ on-resistance against circuit requirements. Consider the TSSOP-8 footprint constraints and thermal dissipation capabilities relative to the application's power handling needs.
This part belongs to the LITTLE FOOT series of surface-mount power MOSFETs by Vishay Siliconix. The series utilizes standard IC packages modified with custom leadframes to provide high-density power switching in minimal board space. The SI6968BEDQ variant specifically offers dual channels in an 8-pin thin-shrink small-outline package.
Check for direct equivalents such as the SI6968BDQ if halogen-free status is not required. Verify pin compatibility and electrical parameters when substituting with other dual N-channel MOSFETs in TSSOP-8 packages.