SI6968BEDQ-T1-GE3

SI6968BEDQ-T1-GE3

$1.33
  • Description:MOSFET 2N-CH 20V 5.2A 8TSSOP
  • Series:TrenchFET®

SKU:3f481f1fba8e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 5.2A 8TSSOP
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:5.2A
  • Rds On (Max) @ Id, Vgs:22mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id:1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

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SI6968BEDQ-T1-GE3

Overview

The Si6968BEDQ-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a common drain configuration in a TSSOP-8 package with integrated ESD protection rated at 3000 V. The device supports a maximum drain-source voltage of 20 V and delivers a continuous drain current of 6.5 A at 25 °C. On-state resistance is specified at 0.022 Ω max at VGS = 4.5 V and 0.030 Ω max at VGS = 2.5 V. Total gate charge is typically 12 nC. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

  • Dual N-channel power MOSFETs using TrenchFET technology
  • Integrated electrostatic discharge protection rated at 3000 V
  • Common drain configuration optimized for low profile surface mounting

Applications

  • Low voltage line driver topologies for 10Base-T and 100Base-TX Ethernet
  • CMOS analogue integrated circuits and data communication equipment
  • Local area network transceivers and low-power electronic drivers

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm material compliance status. The GE3 suffix indicates lead-free and halogen-free construction, whereas other suffixes may contain lead. Confirm RoHS compliance definitions via the manufacturer's official compliance documentation before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring low on-resistance in compact surface-mount designs. Evaluate thermal management requirements based on the junction-to-ambient resistance ratings provided in the datasheet. Ensure gate drive voltages align with the specified thresholds for optimal RDS(on) performance and switching characteristics.

Part Context

This part belongs to the LITTLE FOOT series of power MOSFETs designed by Vishay Siliconix. The TSSOP-8 package provides a significantly reduced footprint compared to traditional SOIC packages while maintaining robust thermal performance through custom leadframe design. This series targets space-constrained portable electronics and high-density circuit board layouts.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the verified source material.

SI6968BEDQ-T1-GE3SI6968BEDQ-T1-GE3
$1.33
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