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The Si6968BEDQ-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a common drain configuration in a TSSOP-8 package with integrated ESD protection rated at 3000 V. The device supports a maximum drain-source voltage of 20 V and delivers a continuous drain current of 6.5 A at 25 °C. On-state resistance is specified at 0.022 Ω max at VGS = 4.5 V and 0.030 Ω max at VGS = 2.5 V. Total gate charge is typically 12 nC. Operating junction temperature ranges from -55 °C to +150 °C.
Verify the specific ordering suffix against official documentation to confirm material compliance status. The GE3 suffix indicates lead-free and halogen-free construction, whereas other suffixes may contain lead. Confirm RoHS compliance definitions via the manufacturer's official compliance documentation before finalizing procurement specifications.
Select this component for applications requiring low on-resistance in compact surface-mount designs. Evaluate thermal management requirements based on the junction-to-ambient resistance ratings provided in the datasheet. Ensure gate drive voltages align with the specified thresholds for optimal RDS(on) performance and switching characteristics.
This part belongs to the LITTLE FOOT series of power MOSFETs designed by Vishay Siliconix. The TSSOP-8 package provides a significantly reduced footprint compared to traditional SOIC packages while maintaining robust thermal performance through custom leadframe design. This series targets space-constrained portable electronics and high-density circuit board layouts.
Publicly confirmed substitute part numbers are not available in the verified source material.