SI6969BDQ-T1-E3

Overview

The SI6969BDQ-T1-E3 is a dual P-channel MOSFET array manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features an 8-pin TSSOP surface-mount package with dimensions of 4.4mm x 3mm x 1.2mm. The device supports a drain-source voltage (Vdss) of -12V and a gate-source voltage (Vgs) of ±8V. At Vgs = -4.5V and Id = -4.6A, the maximum on-resistance (Rds(on)) is 34mΩ. Continuous drain current reaches -4.6A at 25°C ambient temperature, with a pulse current capacity of -30A. Power dissipation is rated at 1.1W, and the junction-to-ambient thermal resistance is 115°C/W. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Dual P-channel configuration in a compact TSSOP-8 package for space-constrained designs
• TrenchFET technology providing low on-resistance and optimized switching performance
• Logic-level gate drive compatibility for direct interface with digital control systems
• Integrated body diode offering reverse current protection capabilities

Applications

• Power management modules in portable electronic devices
• Load switching circuits in industrial automation systems
• High-side load drivers in automotive electronics
• Signal switching applications in communication equipment

Procurement Notes

This component is officially designated as obsolete by the manufacturer. Verification of availability requires checking authorized distributors for remaining stock or surplus inventory. Buyers must confirm the specific manufacturing date code and physical condition before procurement. Alternative sourcing channels may exist through third-party suppliers, but authenticity verification is critical due to the end-of-life status.

Selection Notes

Engineers should evaluate the -12V voltage rating and 34mΩ on-resistance against circuit requirements. The dual P-channel architecture suits applications needing two independent high-side switches. Consider the 1.1W power dissipation limit and 115°C/W thermal resistance for heat management. Verify that the logic-level gate threshold aligns with the controlling microcontroller's output voltage levels.

Part Context

The SI6969BDQ-T1-E3 belongs to Vishay Siliconix's TrenchFET series, representing advanced planar MOSFET technology. This series emphasizes low on-resistance and fast switching speeds. The part is designed for general-purpose switching applications where efficiency and size are priorities. It complements other components in power management and signal routing circuits within consumer and industrial electronics.

Replacement Considerations

SI6913DQ-T1-GE3 is a documented alternative P-channel MOSFET from the same manufacturer.