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Product Detailed Parameters
- Description：MOSFET 2P-CH 12V 8TSSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：34mOhm @ 4.6A, 4.5V
- Vgs(th) (Max) @ Id：450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：40nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The SI6969DQ-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, featuring independent gates within a single SOT-363 surface-mount package. This component provides a drain-source voltage of 20V and a continuous drain current of 4.5A at room temperature. The device utilizes advanced trench technology to achieve low on-resistance, specifically 28 milliohms at a gate drive of 4.5V. Designed for high-efficiency power management, it offers fast switching capabilities with low input capacitance. The compact footprint supports automated assembly processes in portable electronics and battery-powered applications requiring efficient DC-DC conversion.
Feature Summary
- Dual independent N-channel configuration in a compact SOT-363 package
- Low on-resistance achieved through advanced trench MOSFET technology
- Optimized for high-speed switching and power efficiency
- Lead-free finish compliant with RoHS directives
Applications
- Portable consumer electronics power management
- Battery protection circuits
- Load switches in mobile devices
- DC-DC converter output stages
Procurement Notes
Verify the specific suffix T1-GE3 against the manufacturer's latest datasheet to confirm pinout orientation and tape-and-reel specifications. Ensure that the ordering information matches the exact part number required for your bill of materials, as minor suffix variations can indicate different packaging or environmental compliance standards. Cross-reference with authorized distributors to confirm availability and authenticity before procurement.
Selection Notes
Select this component when space constraints necessitate a dual MOSFET solution in an SOT-363 package. It is suitable for applications requiring a 20V rating with moderate current handling up to 4.5A. Consider the thermal performance and on-resistance characteristics relative to the operating duty cycle. Verify that the gate drive voltage aligns with the logic-level requirements for optimal conduction losses.
Part Context
This part belongs to Vishay Siliconix's portfolio of small-signal MOSFETs designed for portable applications. The SI6969 series integrates two N-channel devices to save board space compared to discrete solutions. It is commonly used in smartphones, tablets, and other handheld devices where power efficiency and miniaturization are critical design parameters.
Replacement Considerations
Check for direct substitutes such as the SI6969EDQ-T1-GE3 if higher voltage ratings are needed. Verify pin compatibility and electrical parameters like Rds(on) and Vgs(th) when considering alternatives from other manufacturers. Ensure that any replacement maintains the same SOT-363 footprint and thermal characteristics.
