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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.1A 8TSSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.1A
- Rds On (Max) @ Id, Vgs：31mOhm @ 4.8A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 300µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The SI6981DQ-T1-E3 is a dual P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features an 8-pin TSSOP surface-mount package and operates with a drain-source voltage of -20V and a continuous drain current of -5.7A. The device exhibits a maximum on-resistance of 0.04 ohms at a gate-source voltage of -10V. It supports a junction temperature range from -55°C to +150°C and includes built-in body diodes for each channel.
Feature Summary
- Dual independent P-channel configuration within a compact TSSOP-8 footprint
- TrenchFET power MOSFET technology for optimized performance
- Low on-resistance characteristics for efficient power switching
- Integrated body diodes in both channels
Applications
- DC/DC converter circuits
- Power management modules
- Load switch applications
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official documentation. Check for obsolescence notices as the product lifecycle status may indicate end-of-life conditions. Ensure storage and handling procedures meet moisture sensitivity level requirements specified in the datasheet.
Selection Notes
Select this component for designs requiring dual P-channel switching in a small outline package. Evaluate thermal dissipation capabilities against the 1W power dissipation limit. Compare on-resistance values at specific gate drive voltages to ensure compatibility with logic-level control signals. Verify that the -20V breakdown voltage meets circuit requirements.
Part Context
This part belongs to the SI69 series of dual MOSFETs from Vishay Siliconix. The suffix E3 indicates lead-free construction compliant with RoHS directives. The DQ package designation refers to the TSSOP-8 form factor. This series is designed for general-purpose small signal and power switching applications.
Replacement Considerations
Consult official manufacturer documentation for verified replacement part numbers. Cross-reference electrical parameters such as Rds(on), Vgs threshold, and package dimensions before substitution.
