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The SI6981DQ-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in an 8-pin TSSOP surface-mount package. The device supports a drain-source voltage of 60V and delivers a continuous drain current of 11.3A. Its maximum on-resistance is specified at 19.5 milliohms. The component operates within a temperature range of -55°C to +150°C junction temperature. Power dissipation capability reaches 4.5W. The gate-source voltage limits are defined between -20V and +20V.
This component belongs to the SI6 series of MOSFETs from Vishay Siliconix. It is identified as a discontinued product with limited availability. The datasheet lists SI6981DQ as an alternative part number alias. Designers should verify current supply status before integration due to its end-of-life status.
Public documentation indicates SI6981DQ as an equivalent part number. No other specific substitute models are confirmed in the provided source material.