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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.6A 8TSSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.6A
- Rds On (Max) @ Id, Vgs：24mOhm @ 5.4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs：30nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The SI6983DQ-T1-E3 is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 20V drain-source voltage and a continuous current rating of 4.6A. The device offers a low on-resistance of 24mΩ at 4.5V gate drive. Packaged in an 8-pin TSSOP, it supports logic-level operation for efficient switching applications.
Feature Summary
- Dual P-channel configuration within a single compact package
- TrenchFET technology for optimized performance
- Logic-level gate drive capability
- Low on-resistance for reduced power loss
Applications
- Battery protection circuits
- Power management modules
- Load switch applications
Procurement Notes
Verify component authenticity through authorized channels due to obsolete status. Confirm RoHS compliance details with the manufacturer. Check for alternative sourcing options as distribution availability may be restricted. Ensure storage conditions meet semiconductor handling standards to preserve device integrity prior to assembly.
Selection Notes
Select this component for designs requiring dual P-channel switching in space-constrained environments. Evaluate thermal performance based on the TSSOP-8 package limitations. Compare on-resistance specifications against system efficiency requirements. Ensure gate drive voltages align with the logic-level threshold characteristics for reliable operation.
Part Context
This part belongs to the SI6 series of MOSFETs from Vishay Siliconix. It represents a legacy product line utilizing silicon-based TrenchFET technology. The device serves as a dual-switch solution, replacing discrete components to save board space. Its obsolescence indicates a transition to newer generation packages or technologies.
Replacement Considerations
Consult official documentation for recommended alternatives such as the SI6981DQ. Verify pin compatibility and electrical parameters before substitution. Review obsolescence notices for migration paths. Ensure any replacement meets the same voltage and current ratings.
