SI6993DQ-T1-E3

$1.37

Description：MOSFET 2P-CH 30V 3.6A 8TSSOP
Series：TrenchFET®

SKU:cda79967f0c6 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 3.6A 8TSSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：3.6A
Rds On (Max) @ Id, Vgs：31mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：830mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

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SI6993DQ-T1-E3

Overview

The SI6993DQ-T1-E3 is a dual P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features an 8-TSSOP surface-mount package and supports a drain-source voltage of 30V with a continuous drain current of 3.6A. The device exhibits a maximum on-resistance of 58 milliohms at a gate-source voltage of 10V. Operating characteristics include a threshold voltage range of 0.6 to 2 volts and a total gate charge of 26 nanocoulombs. Thermal performance allows for power dissipation up to 3.1 watts, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

Dual P-channel configuration within a compact 8-TSSOP package
Low on-resistance enabled by TrenchFET planar technology
High thermal stability supporting extended junction temperatures

Applications

Battery protection circuits
Power management modules
Load switching applications

Procurement Notes

Verify component authenticity through authorized distribution channels due to the prevalence of counterfeit semiconductor devices in the market. Confirm that the received parts match the specific Vishay Siliconix marking codes and packaging specifications. Ensure compliance with RoHS directives and check for any obsolescence notices or product change notifications issued by the manufacturer prior to final procurement decisions.

Selection Notes

Select this component when a dual P-channel solution is required for space-constrained designs. The low on-resistance makes it suitable for efficiency-critical power paths. Consider the 8-TSSOP footprint for PCB layout compatibility. Evaluate thermal requirements against the specified power dissipation limits to ensure reliable operation under expected load conditions.

Part Context

This part belongs to the SI69 series of Vishay Siliconix MOSFETs, which are designed for general-purpose switching applications. The TrenchFET technology provides improved figure-of-merit compared to standard planar devices. The E3 suffix indicates lead-free composition and halogen-free status, aligning with modern environmental standards for electronic components.