SI6993DQ-T1-GE3

$1.37

Description：MOSFET 2P-CH 30V 3.6A 8TSSOP
Series：TrenchFET®

SKU:616f1e32b44f Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 3.6A 8TSSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：3.6A
Rds On (Max) @ Id, Vgs：31mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：830mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

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SI6993DQ-T1-GE3

Overview

The SI6993DQ-T1-GE3 is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a drain-source voltage of 30V and a continuous drain current of 3.6A. The device is housed in an 8-pin TSSOP package with a reel shipping configuration. Key electrical parameters include a maximum on-resistance of 45 milliohms at a gate-source voltage of 4.5 volts. The component operates within a temperature range of -55°C to +175°C and has a power dissipation rating of 1.14 watts.

Feature Summary

Dual P-channel configuration for efficient bridge or half-bridge applications
TrenchFET technology ensures low on-resistance and fast switching performance
Enhanced thermal stability supports operation up to 175 degrees Celsius

Applications

DC/DC converter circuits
Motor control systems
Power management modules

Procurement Notes

Verify the specific ordering suffix to ensure compatibility with required packaging formats. Confirm RoHS compliance status through official documentation before integration. Check current lifecycle status as components may be subject to discontinuation or recommended alternative updates. Validate pinout alignment with existing PCB footprints during the design phase.

Selection Notes

Select this component for designs requiring compact dual P-channel solutions with high current capabilities. Evaluate thermal requirements against the specified power dissipation limits. Ensure gate drive voltages remain within the absolute maximum ratings to prevent damage. Consider the TSSOP package dimensions for space-constrained layouts.

Part Context

This part belongs to the SI69xx series of Vishay Siliconix MOSFETs, designed for general-purpose switching applications. The series emphasizes low profile and high efficiency. The DG2537DQ-T1-GE3 represents a different product category within the same manufacturer portfolio.