SI7196DP-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI7196DP-T1-GE3 is a single-channel N-channel MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device offers an on-state resistance of 0.011 Ω at VGS = 10 V and 0.0145 Ω at VGS = 4.5 V, supporting a continuous drain current of 16 A. Total gate charge is typically 24.5 nC at VGS = 10 V and 13.2 nC at VGS = 4.5 V. It is housed in a leadless PowerPAK SO-8 surface-mount package.

Single FETs, MOSFETs Feature Summary

• Utilizes TrenchFET technology for extremely low gate-drain charge to reduce switching losses
• Features a leadless PowerPAK SO-8 package providing direct thermal path via exposed copper drain pad
• Subjected to 100% avalanche testing during manufacturing

Single FETs, MOSFETs Applications

• Notebook systems
• Core voltage high-side switching
• System power low-side switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms both lead-free composition and halogen-free compliance according to IEC 61249-2-21 standards. Confirm that the PowerPAK SO-8 package requires appropriate land pattern design to utilize the exposed copper drain pad for optimal thermal dissipation. Ensure soldering profiles adhere to recommended reflow temperatures for lead-free processes.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution is required for 30 V applications with moderate current demands up to 16 A. The low gate charge characteristics make it suitable for driving efficiency requirements in portable electronics. Verify that the PCB layout supports the thermal performance benefits of the PowerPAK footprint compared to standard SO-8 packages.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si7196DP series of N-channel MOSFETs. It is manufactured using silicon technology and utilizes the TrenchFET platform. The product is available in the PowerPAK SO-8 package configuration designed for surface mounting on printed circuit boards.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for confirmed substitute part numbers. Cross-referencing should verify matching voltage ratings, current capabilities, and package dimensions.

Single FETs, MOSFETs FAQ

What is the maximum peak soldering temperature allowed for this component?

The maximum peak soldering temperature is 260 °C.

How does the PowerPAK SO-8 package differ from a standard SO-8 regarding thermal performance?

The PowerPAK SO-8 provides a direct, low-resistance thermal path through an exposed copper drain pad, offering significantly better thermal performance than a standard SO-8 package while maintaining the same footprint.