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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4.9A PPAK 1212
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.9A
- Rds On (Max) @ Id, Vgs：36mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix Si7212DN-T1-GE3 is a dual N-channel MOSFET featuring a 30-V drain-source voltage rating and a PowerPAK 1212-8 surface-mount package. It provides two independent channels with a maximum continuous drain current of 6.8 A at 25 °C. The device exhibits a low on-state resistance of 0.036 Ω at VGS = 10 V and 0.039 Ω at VGS = 4.5 V. Key dynamic parameters include a typical total gate charge of 71 nC, turn-on delay time of 10 ns, and fall time of 10 ns. Thermal performance is characterized by a junction-to-case thermal resistance of 4.3 °C/W.
Feature Summary
- Dual N-channel configuration within a compact PowerPAK 1212-8 footprint for space-constrained designs
- Optimized for fast switching applications with low gate charge and minimal switching times
- Halogen-free construction compliant with IEC 61249-2-21 standards
Applications
- Synchronous rectification circuits
- Intermediate driver stages in power conversion systems
Procurement Notes
Verify the specific ordering suffix to confirm halogen-free status. The -GE3 designation indicates lead-free and halogen-free compliance. Confirm that the component matches the exact datasheet revision required for your design specifications before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel topology is required in a small form factor. Ensure the application operates within the 30-V drain-source voltage limit and accounts for the 6.8 A continuous current capability at 25 °C ambient temperature. Verify gate drive voltages align with the specified RDS(on) thresholds.
Part Context
This part belongs to the Vishay Siliconix Si7 series of dual MOSFETs. It utilizes the PowerPAK 1212-8 package, which offers superior thermal dissipation compared to standard TSSOP-8 packages while maintaining a significantly smaller footprint. The device is designed for high-efficiency switching applications requiring compact packaging.
Replacement Considerations
Check for direct pin-compatible alternatives within the same PowerPAK 1212-8 family. Verify that any substitute maintains identical electrical characteristics, specifically the 30-V rating and dual-channel configuration, to ensure circuit compatibility without layout changes.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction and storage temperature range is -55 °C to +150 °C.
How does the package affect thermal performance?
The PowerPAK 1212-8 package provides a low junction-to-case thermal resistance of 4.3 °C/W, allowing efficient heat transfer to the PCB substrate compared to larger SMT packages.
Is the device suitable for high-frequency switching?
Yes, the device features fast switching characteristics with a typical turn-on delay time of 10 ns and a fall time of 10 ns, making it suitable for high-frequency applications.
