SI7214DN-T1-GE3

Overview

The Vishay Siliconix SI7214DN-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a PowerPAK 1212-8 surface-mount package with a drain-source voltage (VDS) of 30 V and a gate-source voltage (VGS) of ±20 V. The device provides a maximum on-state resistance (RDS(on)) of 0.04 Ω at VGS = 10 V and 0.047 Ω at VGS = 4.5 V. Continuous drain current (ID) is rated at 6.4 A at TA = 25 °C and 4.6 A at TJ = 150 °C. Gate charge (Qg) is typically 4.2 nC, with turn-on and turn-off times of 10 ns and 6 ns respectively. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration with independent channel control in a compact leadless PowerPAK 1212-8 package.
• TrenchFET power MOSFET architecture optimized for high efficiency applications and synchronous rectification.
• Halogen-free construction compliant with IEC 61249-2-21 standards.

Applications

• Synchronous rectification
• High efficiency power conversion circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm halogen-free status and lead-free composition. Confirm that the component matches the exact Vishay part number before integration into designs. Check datasheet revision history for any updates to electrical parameters or thermal ratings prior to finalizing procurement specifications.

Selection Notes

Select this component when space-constrained designs require dual N-channel switching capabilities within a low-profile footprint. Evaluate thermal management requirements based on the specified junction-to-ambient resistance values. Ensure gate drive voltages align with the specified RDS(on) thresholds for optimal conduction performance.

Part Context

This component belongs to the Vishay Siliconix Si72 series of dual MOSFETs. It utilizes the PowerPAK 1212-8 package, which offers superior thermal dissipation compared to standard SO-8 packages while maintaining a significantly smaller footprint. The device integrates two independent N-channel MOSFETs designed for efficient power switching.

Replacement Considerations

Consult official Vishay documentation for verified direct replacements. Cross-referencing requires matching package type, pinout configuration, and electrical ratings precisely.

FAQ

What is the typical total gate charge (Qg) for the SI7214DN?

The typical total gate charge is 4.2 nC under test conditions of VDS = 15 V, VGS = 4.5 V, and ID = 6.4 A.

How does the package design affect thermal performance?

The PowerPAK 1212-8 package exposes the bottom of the die attach pad, providing a direct, low-resistance thermal path to the substrate, resulting in significantly lower junction-to-foot thermal resistance compared to standard SMT packages.

Is the device suitable for synchronous rectification?

Yes, the product summary explicitly lists synchronous rectification as a primary application for this dual N-channel MOSFET.