SI7216DN-T1-E3

Overview

The Vishay Siliconix SI7216DN-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in a lead-free PowerPAK 1212-8 package. It features a drain-source voltage (VDS) of 40 V and a continuous drain current (ID) of 6 A at TC = 25 °C. The on-state resistance (RDS(on)) is typically 0.032 Ω at VGS = 10 V and 0.039 Ω at VGS = 4.5 V. Total gate charge (Qg) is typically 19 nC at VGS = 10 V. Maximum power dissipation reaches 20.8 W at TC = 25 °C. Operating junction temperature ranges from -50 °C to +150 °C.

Feature Summary

• Dual N-channel configuration with independent Gate 1, Drain 1, Source 1, Gate 2, Drain 2, and Source 2 terminals.
• Low thermal resistance PowerPAK 1212-8 package with a small footprint and low profile.
• Halogen-free construction compliant with IEC 61249-2-21 standards.

Applications

• Primary side switching
• Synchronous rectification

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The E3 suffix indicates lead-free composition, while GE3 denotes both lead-free and halogen-free status. Confirm that the component meets RoHS Directive 2002/95/EC requirements for your specific manufacturing process and regulatory environment.

Selection Notes

Select this component when space constraints require a compact dual MOSFET solution without compromising thermal performance. The PowerPAK 1212-8 package offers superior thermal characteristics compared to standard SO-8 or TSSOP-8 packages. Ensure adequate copper spreading on the PCB drain pad to maximize heat dissipation capabilities.

Part Context

This device belongs to the Vishay Siliconix TrenchFET family, designed for high-efficiency switching applications. It integrates two N-channel MOSFETs into a single surface-mount package, providing a compact alternative to discrete components. The design emphasizes low thermal impedance and robust electrical performance within a minimal physical footprint.

Replacement Considerations

The Si7216D N-T1-GE3 is an officially documented variant offering identical electrical specifications but includes halogen-free compliance. Verify pinout compatibility and package dimensions when substituting between different manufacturer families.

FAQ

What is the maximum junction-to-case thermal resistance?

The typical maximum junction-to-case (drain) steady-state thermal resistance is 4.5 °C/W, with a maximum limit of 6 °C/W.

How does the gate threshold voltage vary with temperature?

The gate-source threshold voltage temperature coefficient is specified as -5.8 mV/°C, indicating a decrease in threshold voltage as temperature increases.

What are the body diode reverse recovery characteristics?

At TJ = 25 °C, IF = 3.2 A, and dI/dt = 100 A/µs, the reverse recovery time (trr) is typically 50 ns with a maximum of 75 ns.