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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 6A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：32mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：670pF @ 20V
- Power - Max：20.8W
- Operating Temperature：-50°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7216DN-T1-GE3 is a dual N-channel MOSFET featuring a 40-V drain-source voltage rating. It utilizes TrenchFET technology within a compact PowerPAK 1212-8 package, which provides a low thermal profile of 1.07 mm. The device offers a maximum on-state resistance of 0.039 Ω at VGS = 4.5 V and 0.032 Ω at VGS = 10 V. Continuous drain current reaches 6 A at TC = 25 °C, with a total gate charge typically ranging from 5.5 nC to 19 nC depending on drive conditions. Thermal performance includes a junction-to-case resistance of 4.5 °C/W.
Feature Summary
- Dual N-channel configuration in a single leadless PowerPAK 1212-8 package
- TrenchFET technology for optimized switching performance
- Low thermal resistance design suitable for space-constrained applications
Applications
- Primary side switching circuits
- Synchronous rectification systems
Procurement Notes
Verify the specific ordering suffix GE3 to confirm compliance with RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free requirements. Ensure the component matches the documented datasheet revision C (S11-1142) for accurate electrical parameters. Cross-reference pin assignments against the official PowerPAK 1212-8 mechanical drawing to prevent layout errors during integration.
Selection Notes
Select this component for designs requiring dual N-channel isolation within a minimal footprint. Evaluate the 40-V breakdown voltage against peak transient loads. Consider the 0.039 Ω RDS(on) specification when calculating conduction losses at lower gate drive voltages. Verify that the PCB copper area meets the recommended land pattern guidelines to achieve the specified thermal resistance values.
Part Context
This part belongs to the Vishay Siliconix Si7216 series of dual MOSFETs. It shares the PowerPAK 1212-8 form factor with other Vishay devices but differs in voltage ratings and channel configurations. The dual topology allows for independent control of two channels within a single surface-mount package.
Replacement Considerations
Direct substitutes must match the dual N-channel architecture and PowerPAK 1212-8 footprint. Verify that alternative components meet or exceed the 40-V VDS rating and comparable RDS(on) specifications to maintain circuit efficiency.
