SI7218DN-T1-GE3

Overview

The Si7218DN-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 30-V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum continuous drain current of 24 A at a case temperature of 25 °C. On-state resistance is specified as 0.025 Ω at VGS = 10 V and 0.033 Ω at VGS = 4.5 V. Total gate charge is typically 11 nC at VGS = 10 V. Maximum power dissipation reaches 23 W at TC = 25 °C. Thermal resistance from junction to case is typically 4.3 °C/W. The component is housed in a leadless PowerPAK 1212-8 surface-mount package.

Feature Summary

• Dual configuration with independent N-channel MOSFETs integrated into a single compact package.
• TrenchFET technology enables low on-state resistance for efficient switching performance.
• Leadless PowerPAK 1212-8 package design minimizes footprint while providing direct thermal paths to the substrate.

Applications

• Synchronous rectification circuits
• Notebook system power management
• Point-of-load (POL) conversion

Procurement Notes

Verify the specific ordering suffix GE3 to confirm halogen-free compliance according to IEC 61249-2-21 standards. Ensure the procurement documentation matches the exact part number Si7218DN-T1-GE3 to distinguish it from the standard lead-free variant. Cross-reference datasheet document number 73958 during verification.

Selection Notes

Select this component when space constraints require a dual MOSFET solution in a small footprint. Evaluate thermal requirements against the 4.3 °C/W junction-to-case resistance. Confirm that the 30-V breakdown voltage aligns with the circuit's operating limits. Verify gate drive voltages match the specified RDS(on) conditions.

Part Context

This component belongs to the Si7218 series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK 1212-8 package, which offers superior thermal performance compared to standard SO-8 packages. The product line focuses on high-density power applications requiring low profile and efficient heat dissipation.

Replacement Considerations

Si7218DN-T1-E3 serves as a verified substitute. This alternative maintains identical electrical specifications but lacks the halogen-free certification associated with the GE3 suffix. Verify package compatibility before implementation.

FAQ

What is the typical total gate charge for the Si7218DN?

The typical total gate charge is 11 nC, measured under conditions of VDS = 15 V, VGS = 10 V, and ID = 8 A.

How does the on-state resistance vary with gate voltage?

RDS(on) is specified as 0.025 Ω at VGS = 10 V and increases to 0.033 Ω at VGS = 4.5 V.

Is the Si7218DN suitable for synchronous rectification?

Yes, synchronous rectification is explicitly listed as a primary application for this dual N-channel MOSFET.