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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 3.4A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3.4A
- Rds On (Max) @ Id, Vgs：60mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7220DN-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and operates within a junction temperature range of -55 °C to 150 °C. The device provides a maximum continuous drain current of 3.4 A at 25 °C, with a peak pulsed current capability of 20 A. On-state resistance is specified as 60 mΩ at VGS = 10 V and 75 mΩ at VGS = 4.5 V. Total gate charge reaches a maximum of 20 nC at VGS = 10 V. The component is housed in a leadless PowerPAK 1212-8 surface-mount package.
Feature Summary
- Dual N-channel configuration integrated into a single compact PowerPAK 1212-8 package
- TrenchFET power MOSFET architecture for optimized switching performance
- Leadless design providing low thermal impedance and reduced footprint compared to standard SO-8 packages
Applications
- Synchronous rectification circuits
- Primary side switch applications
Procurement Notes
Verify the specific ordering suffix when sourcing components. The GE3 designation confirms compliance with RoHS 3 standards and halogen-free requirements per IEC 61249-2-21. Confirm that the requested units match the exact Vishay part number to ensure correct packaging and material specifications are received.
Selection Notes
Evaluate the 60 V breakdown voltage against circuit operating conditions to maintain adequate safety margins. Consider the 60 mΩ on-resistance at 10 V gate drive for conduction loss calculations. Ensure the PCB layout accommodates the exposed copper drain pad to maximize heat dissipation through the PowerPAK 1212-8 package.
Part Context
This component belongs to the Vishay Siliconix Si7220 series of dual N-channel MOSFETs. It utilizes the PowerPAK 1212-8 package, which offers a significantly smaller footprint than traditional SO-8 packages while maintaining comparable thermal performance characteristics.
Replacement Considerations
The Si7220DN-T1-E3 serves as a direct functional substitute, differing only by the absence of the halogen-free designation.
