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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：35mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：570pF @ 15V
- Power - Max：17.8W, 23W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The SI7224DN-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in a PowerPAK 1212-8 surface-mount package. It features a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 6 A at TC = 25 °C. Channel 1 has a maximum on-resistance (RDS(on)) of 35 mΩ at VGS = 10 V and 42 mΩ at VGS = 4.5 V. Channel 2 exhibits lower resistance with maximum values of 28 mΩ at VGS = 10 V and 35 mΩ at VGS = 4.5 V. The device supports a gate-source voltage (VGS) range of ±16 V for Channel 1 and ±20 V for Channel 2. Maximum power dissipation reaches 17.8 W for Channel 1 and 23 W for Channel 2 at TC = 25 °C. Operating junction temperature spans from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration within a compact leadless PowerPAK 1212-8 footprint
- TrenchFET technology providing low on-state resistance for efficient switching
- Enhanced thermal performance via exposed copper drain pad for direct substrate heat transfer
Applications
- Notebook PC system power distribution
- Low current point-of-load (POL) regulation
Procurement Notes
Verify component authenticity through authorized Vishay distributors or original manufacturer channels. Confirm the specific ordering suffix matches the required halogen-free status. Validate RoHS compliance documentation against current regulatory standards before integration into production assemblies.
Selection Notes
Evaluate thermal management requirements based on the specified junction-to-case resistance values. Ensure PCB land patterns adhere to recommended minimums for the PowerPAK 1212-8 package to maximize heat dissipation. Verify that gate drive voltages align with the distinct threshold specifications for each channel to guarantee proper logic-level operation.
Part Context
This component belongs to the Vishay Siliconix TrenchFET family, designed for space-constrained power applications. The PowerPAK 1212-8 package offers superior thermal characteristics compared to standard SO-8 or TSSOP-8 packages while maintaining a significantly smaller footprint. It serves as a high-density solution for modern portable electronics requiring efficient power switching.
Replacement Considerations
Consult official Vishay documentation for verified cross-reference part numbers. No public substitute part numbers are confirmed in the provided source material.
