SI7336ADP-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI7336ADP-T1-GE3 is a single N-channel MOSFET utilizing TrenchFET Gen II technology. It features a 30 V drain-source voltage rating and a continuous drain current of 30 A at 25 °C. The device offers an ultra-low on-resistance of 3 mΩ at VGS = 10 V and 4 mΩ at VGS = 4.5 V. Total gate charge is typically 36 nC. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a leadless PowerPAK SO-8 package with a maximum height of 1.12 mm.

Single FETs, MOSFETs Feature Summary

• Ultra-low on-resistance achieved through high-density TrenchFET Gen II power MOSFET technology
• Optimized total gate charge for efficient switching performance
• Low thermal resistance PowerPAK SO-8 package with a profile height of 1.07 mm
• Guaranteed 100% testing for both gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

• Low-side DC/DC conversion for notebook computers
• Low-side DC/DC conversion for server systems
• Low-side DC/DC conversion for workstation platforms

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm compliance attributes. The GE3 suffix indicates the component is lead-free and halogen-free, whereas the E3 suffix denotes lead-free status only. Ensure the required environmental specifications align with the selected suffix before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical in space-constrained designs. The PowerPAK SO-8 package provides thermal performance comparable to larger packages while maintaining a standard SO-8 footprint. Evaluate the thermal requirements based on the application's ambient temperature and board copper area to ensure the junction temperature remains within safe operating limits.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si7 series of power MOSFETs. It utilizes the PowerPAK SO-8 package, which shares the same footprint as the standard SO-8 but allows for a larger die size due to its leadless construction. This design facilitates direct mounting onto existing SO-8 land patterns while offering superior heat dissipation capabilities.

Single FETs, MOSFETs Replacement Considerations

The datasheet lists SI7336ADP-T1-E3 as the lead-free alternative to the SI7336ADP-T1-GE3. Verify that the halogen-free requirement is met if replacing the GE3 variant with the E3 variant.