SI7386DP-T1-E3

$1.80

Description：MOSFET N-CH 30V 12A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c577d5c2df1d Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SI7386DP-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 12A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI7386DP-T1-E3

Description：MOSFET N-CH 30V 12A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 19A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SI7386DP-T1-E3

SI7386DP-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI7386DP-T1-E3 is a single N-channel TrenchFET Gen II Power MOSFET housed in a leadless PowerPAK SO-8 package. It features a drain-source voltage of 30 V and a continuous drain current of 19 A at 25 °C. The device exhibits a maximum on-state resistance of 0.007 Ω at VGS = 10 V and 0.0095 Ω at VGS = 4.5 V, with a typical total gate charge of 11.5 nC. Maximum power dissipation reaches 5 W at 25 °C, supported by a junction-to-case thermal resistance of 2.4 °C/W.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET Gen II technology to optimize PWM efficiency for high-performance switching applications.
Incorporates a low-profile PowerPAK SO-8 package designed to minimize thermal resistance while maintaining standard SO-8 footprint compatibility.
Engineered with reduced gate charge characteristics to facilitate fast switching speeds.

Single FETs, MOSFETs Applications

DC/DC conversion circuits for personal computers
High-efficiency PWM power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm compliance status. The -E3 suffix indicates lead-free construction, whereas the -GE3 suffix denotes both lead-free and halogen-free attributes. Ensure that the selected variant aligns precisely with project environmental requirements before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing space-constrained power stages requiring robust thermal performance within a standard surface-mount footprint. The device is suitable for applications demanding low conduction losses and rapid switching transitions. Evaluate the PCB copper area connected to the drain pad to maximize heat dissipation capabilities effectively.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SI7 series of power MOSFETs. It represents an evolution in packaging technology, offering thermal characteristics comparable to larger DPAK packages while utilizing the compact dimensions of the traditional SO-8 form factor.