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SI7452DP-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 11.5A PPAK SO-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI7452DP-T1-E3
- Description：MOSFET N-CH 60V 11.5A PPAK SO-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8.3mOhm @ 19.3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：160 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：1.9W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SI7452DP-T1-E3
Single FETs, MOSFETs Overview
The SI7452DP-T1-E3 is a single N-channel PowerTrench MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a compact PowerPAK SO-8 surface-mount package. The device features a drain-source voltage rating of 60V and supports continuous drain currents up to 29A at ambient temperature. Key electrical characteristics include a maximum on-resistance of 12 milliohms at a gate-source voltage of 10V, with a threshold voltage typically around 2 volts. The component is designed for high-efficiency switching applications within an operating junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Employs advanced TrenchFET process technology to achieve low specific on-resistance for improved power efficiency.
- Utilizes a lead-free PowerPAK SO-8 surface-mount package designed for optimized thermal performance and minimal PCB footprint.
- Features enhanced avalanche ruggedness capabilities suitable for demanding inductive load switching environments.
Single FETs, MOSFETs Applications
- DC-DC converter output stages
- Load switch circuits
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify the exact suffix against official manufacturer documentation to confirm compliance status and tape-and-reel specifications. Ensure that the ordering part number matches the required package variant and environmental certifications before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a low-profile surface-mount solution is required for 60V applications. Evaluate the thermal resistance parameters relative to the intended PCB copper area to ensure adequate heat dissipation for the target current levels.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix PowerTrench family of N-channel MOSFETs. These devices are engineered to replace older generations of discrete transistors by offering superior Rds(on) per silicon area. The PowerPAK SO-8 packaging provides a robust mechanical structure while maintaining compatibility with standard SMT assembly processes.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes. Confirm that any alternative device maintains identical pinout configuration and meets or exceeds the original voltage and current ratings.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
