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SI7455DP-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 80V 28A PPAK SO-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI7455DP-T1-E3
- Description：MOSFET P-CH 80V 28A PPAK SO-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：155 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5160 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：5.2W (Ta), 83.3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SI7455DP-T1-E3
Single FETs, MOSFETs Overview
The Vishay Siliconix SI7455DP-T1-E3 is a P-Channel MOSFET utilizing TrenchFET technology. It features an 80 V drain-source voltage and a continuous drain current of -28 A at TC = 25 °C. The device exhibits a maximum on-state resistance of 0.025 Ω at VGS = -10 V and 0.029 Ω at VGS = -6 V. Total gate charge is typically 102 nC at VGS = -10 V. Maximum power dissipation reaches 83.3 W at TC = 25 °C. Operating junction temperature ranges from -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- TrenchFET Power MOSFET technology for optimized performance
- Lead-free construction compliant with IEC 61249-2-21 standards
- PowerPAK SO-8 leadless package design
Single FETs, MOSFETs Applications
- DC/DC converters
- Load switches
- High-side load control
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against manufacturer documentation. The -E3 suffix indicates lead-free composition, while -GE3 denotes both lead-free and halogen-free status. Confirm that the requested component matches the exact electrical specifications and package dimensions required for the target circuit design before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component based on its 80 V breakdown voltage and low on-resistance characteristics suitable for high-current applications. Evaluate thermal management requirements carefully, as power dissipation capabilities are highly dependent on case temperature conditions. Ensure gate drive voltages align with the specified thresholds for optimal switching performance.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix Si7455 series of P-Channel MOSFETs. It is manufactured using silicon technology and housed in a PowerPAK SO-8 surface-mount package. The device is designed for efficient power switching applications requiring robust performance within a compact footprint.
Single FETs, MOSFETs Replacement Considerations
Consult official datasheets for direct replacements. Verify compatibility regarding pinout configuration, voltage ratings, and thermal characteristics when substituting components.
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