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SI7464DP-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 200V 1.8A PPAK SO-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI7464DP-T1-E3
- Description：MOSFET N-CH 200V 1.8A PPAK SO-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：240mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SI7464DP-T1-E3
Single FETs, MOSFETs Overview
The Vishay Siliconix SI7464DP-T1-E3 is a single N-channel 200 V (D-S) Fast Switching MOSFET utilizing TrenchFET power technology. It features a low thermal resistance PowerPAK SO-8 package with a 1.07 mm profile. The device offers a maximum drain-source on-state resistance of 0.24 Ω at VGS = 10 V and 0.26 Ω at VGS = 6 V, with a typical total gate charge of 12 nC. Continuous drain current is rated at 2.8 A at TA = 25 °C. Operating junction temperature ranges from -55 to +150 °C.
Single FETs, MOSFETs Feature Summary
- TrenchFET power MOSFET technology optimized for fast switching in PWM applications
- Low thermal resistance PowerPAK SO-8 package with a 1.07 mm profile
- Lead-free and halogen-free compliant construction
Single FETs, MOSFETs Applications
- Primary side switch
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm material compliance status. The -E3 suffix indicates lead-free composition, while the -GE3 suffix denotes both lead-free and halogen-free materials. Confirm that the component matches the exact datasheet revision required for your design specifications before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high voltage blocking capability combined with efficient thermal management in a compact footprint. The PowerPAK SO-8 package allows direct substitution for standard SO-8 devices while providing superior heat dissipation characteristics comparable to larger packages. Ensure adequate copper spreading on the PCB drain pad to maximize thermal performance.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix Si74xx series of N-channel MOSFETs. It utilizes the PowerPAK SO-8 package, which shares the same footprint and pin-out as standard SO-8 devices but accommodates a larger die size for improved electrical and thermal performance.
Single FETs, MOSFETs Replacement Considerations
The datasheet does not list specific substitute part numbers. Designers may consider other Vishay N-channel MOSFETs in the PowerPAK SO-8 package with similar voltage and current ratings, provided they verify pin compatibility and thermal requirements.
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