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SI7476DP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 40V 15A PPAK SO-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI7476DP-T1-GE3
- Description：MOSFET N-CH 40V 15A PPAK SO-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：177 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：1.9W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SI7476DP-T1-GE3
Single FETs, MOSFETs Overview
The SI7476DP-T1-GE3 is an N-Channel MOSFET manufactured by Vishay Siliconix. It features a drain-to-source voltage (Vds) of 40V and a continuous drain current (Id) of 15A at 25°C. The device utilizes TrenchFET technology and is housed in a PowerPAK SO-8 surface-mount package. Key electrical parameters include a gate-source voltage (Vgs) rating of ±20V, a maximum power dissipation (Pd) of 5.4W, and a typical on-resistance (Rds(on)) of 6.1mΩ at Vgs=10V. The component operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchFET technology for enhanced performance
- Single-channel N-Configuration
- Surface-mount PowerPAK SO-8 packaging
Single FETs, MOSFETs Applications
- Power switching circuits
- Load management systems
- DC-DC converter stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix T1-GE3 against the manufacturer's official datasheet to confirm tape-and-reel packaging and lead-free compliance. Confirm that the 15A current rating aligns with your thermal design constraints, as this value is typically specified at 25°C case temperature. Ensure the PowerPAK SO-8 footprint matches your PCB layout requirements before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a 40V N-Channel MOSFET with moderate current handling is required in a compact surface-mount form factor. The low on-resistance supports efficient power conversion. Consider the 5.4W power dissipation limit and ensure adequate thermal management is integrated into the design to maintain reliability under load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix SIR and SI series of TrenchFET MOSFETs. These devices are designed for general-purpose switching applications requiring high efficiency and fast switching speeds. The PowerPAK SO-8 package provides a balance between thermal performance and board space savings compared to traditional through-hole packages.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for equivalent 40V, 15A N-Channel MOSFETs in PowerPAK SO-8 packages. Verify pinout compatibility and thermal characteristics before replacing.
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