SI7530DP-T1-E3

$1.45

Description：MOSFET N/P-CH 60V 3A PPAK SO8
Series：-

SKU:a648cd4c591c Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V 3A PPAK SO8
Series：-
Mfr：Vishay Siliconix
Package：Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：3A, 3.2A
Rds On (Max) @ Id, Vgs：75mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.4W, 1.5W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：-
Qualification：-

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SI7530DP-T1-E3

Overview

The SI7530DP-T1-E3 is a dual N/P-channel MOSFET array manufactured by Vishay Siliconix. It utilizes TrenchFET technology within a PowerPAK-SO-8 surface-mount package. The device features a drain-source breakdown voltage of 60 V and continuous current ratings of 3 A for the N-channel and 3.2 A for the P-channel. Key electrical parameters include a maximum on-resistance of 1.4 Ohms for the N-channel and 1.5 Ohms for the P-channel, with a power dissipation capacity of 1.9 W.

Feature Summary

Integrates complementary N-channel and P-channel MOSFETs in a single compact package to reduce board space.
Employs TrenchFET technology to achieve low on-resistance for improved efficiency.
Designed for high-efficiency switching applications requiring robust performance.

Applications

Power management circuits
High-efficiency switching applications
DC/DC converter designs

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices, as availability may be limited. Ensure the specific suffix matches project requirements for tape and reel packaging specifications.

Selection Notes

Select this component when a matched N/P pair is required for synchronous rectification or load switching. Evaluate thermal constraints due to the 1.9 W power dissipation limit in the SO-8 package. Compare on-resistance values against system efficiency targets and ensure gate drive voltages align with threshold specifications.

Part Context

This part belongs to the SI7 series of MOSFET arrays from Vishay Siliconix. It represents a solution for integrating complementary switching elements, replacing discrete components to simplify assembly. The PowerPAK-SO-8 package offers a balance between thermal performance and footprint reduction compared to traditional packages.