SI7846DP-T1-GE3

$2.69

Description：MOSFET N-CH 150V 4A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cd63358de4ca Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI7846DP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 150V 4A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI7846DP-T1-GE3

Description：MOSFET N-CH 150V 4A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：1.9W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SI7846DP-T1-GE3

SI7846DP-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI7846DP-T1-GE3 is a single N-channel MOSFET utilizing TrenchFET technology. It features a 150 V drain-source voltage rating and a maximum on-resistance of 0.050 Ω at VGS = 10 V. The device supports a continuous drain current of up to 24.5 A at TC = 25 °C and handles a pulsed drain current of 50 A. Packaged in a leadless PowerPAK SO-8 with a low profile, it offers a junction-to-case thermal resistance of 1.5 °C/W typical. Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET technology optimized for fast switching applications
Low thermal resistance PowerPAK package with a reduced height profile
Halogen-free construction compliant with IEC 61249-2-21 standards

Single FETs, MOSFETs Applications

Primary side switching for high density DC/DC converters
Telecom and server 48 V DC/DC conversion
Industrial and 42 V automotive systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm compliance requirements. The GE3 designation indicates lead-free and halogen-free status, while E3 denotes lead-free only. Ensure the component matches the required RoHS directives for your assembly process. Cross-reference the document number 71442 to access the most current electrical specifications and reliability data before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 150 V blocking capability is required within a compact surface-mount footprint. The low on-resistance and optimized gate charge support efficient PWM operation. Evaluate the thermal management strategy based on the specified junction-to-ambient resistance values. Confirm that the operating voltage and current limits align with the system's peak and steady-state demands.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si7846DP series of N-channel MOSFETs. It utilizes the PowerPAK SO-8 package, which shares the same footprint as standard SO-8 devices but provides superior thermal performance due to an exposed drain pad. The series is designed to bridge the gap between small signal packages and larger DPAK components.