SI7904BDN-T1-E3

Overview

The SI7904BDN-T1-E3 is a dual N-channel 20 V (D-S) MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET power MOSFET technology and is housed in a PowerPAK 1212-8 surface-mount package. The device features a maximum drain-source voltage of 20 V and a continuous drain current of 6 A at 25 °C. On-state resistance is specified as 0.030 Ω max at VGS = 4.5 V, 0.036 Ω max at VGS = 2.5 V, and 0.045 Ω max at VGS = 1.8 V. Typical gate charge is 9 nC at VGS = 4.5 V. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration within a compact PowerPAK 1212-8 leadless package
• TrenchFET technology for optimized on-resistance and switching performance
• Logic-level gate drive capability with low threshold voltage specifications

Applications

• HDD spindle drive circuits

Procurement Notes

Verify the specific ordering suffix when sourcing components. The E3 suffix indicates lead-free construction, while GE3 denotes both lead-free and halogen-free compliance. Confirm that the selected variant matches the environmental requirements of the target assembly process before finalizing procurement orders.

Selection Notes

Evaluate thermal management requirements based on the application's duty cycle. Junction-to-case thermal resistance is 5.6 °C/W typical, but junction-to-ambient resistance reaches 50 °C/W maximum under steady-state conditions. Ensure adequate copper area on the PCB drain pad to maintain safe operating temperatures during continuous operation.

Part Context

This component belongs to the Vishay Siliconix Si79xx series of dual MOSFETs designed for space-constrained applications. The PowerPAK 1212-8 package offers a footprint comparable to TSOP-6 while providing significantly improved thermal dissipation compared to standard SO-8 or TSSOP-8 packages.

Replacement Considerations

SI7904BDN-T1-GE3