SI7904DN-T1-E3

SI7904DN-T1-E3

$0.53
  • Description:MOSFET 2N-CH 20V 5.3A PPAK 1212
  • Series:TrenchFET®

SKU:ba1d29532d69 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 5.3A PPAK 1212
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:5.3A
  • Rds On (Max) @ Id, Vgs:30mOhm @ 7.7A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 935µA
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1.3W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® 1212-8 Dual
  • Supplier Device Package:PowerPAK® 1212-8 Dual
  • Grade:-
  • Qualification:-

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SI7904DN-T1-E3

Overview

The SI7904DN-T1-E3 is a Vishay Siliconix N-channel PowerTrench MOSFET housed in a PowerPAK-1212-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 15 A. The device exhibits a maximum on-resistance (Rds(on)) of 25 mΩ at a gate-source voltage (Vgs) of 10 V, with a threshold voltage (Vgs(th)) ranging from 1 V to 4 V. Gate charge (Qg) is typically 12 nC. Operating temperatures span from -55 °C to +150 °C junction temperature, with power dissipation rated at 3.5 W.

Feature Summary

  • Utilizes TrenchFET technology for optimized low on-resistance performance
  • Designed for high-efficiency synchronous rectification applications
  • Lead-free finish compliant with RoHS standards

Applications

  • Synchronous rectification in DC/DC converters
  • Load switching circuits
  • Power management modules

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific suffix matches the required tape-and-reel packaging configuration. Ensure compliance with relevant environmental directives before integration into final assemblies.

Selection Notes

Select this component when a 60 V N-channel MOSFET with low gate charge is required for compact power stages. Evaluate thermal resistance characteristics against the PCB copper area available for heat dissipation. Compare Rds(on) specifications against alternative packages to ensure optimal efficiency within the target system constraints.

Part Context

This part belongs to the Vishay PowerTrench family, designed for high-density power applications. The PowerPAK-1212-8 package provides enhanced thermal performance compared to traditional SO-8 footprints while maintaining a small board footprint suitable for modern portable electronics.

Replacement Considerations

Consult official cross-reference lists for verified equivalents. Ensure substitute components match the 60 V rating, 15 A current capacity, and PowerPAK-1212-8 pinout configuration.

SI7904DN-T1-E3SI7904DN-T1-E3
$0.53
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