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The SI7904DN-T1-E3 is a Vishay Siliconix N-channel PowerTrench MOSFET housed in a PowerPAK-1212-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 15 A. The device exhibits a maximum on-resistance (Rds(on)) of 25 mΩ at a gate-source voltage (Vgs) of 10 V, with a threshold voltage (Vgs(th)) ranging from 1 V to 4 V. Gate charge (Qg) is typically 12 nC. Operating temperatures span from -55 °C to +150 °C junction temperature, with power dissipation rated at 3.5 W.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific suffix matches the required tape-and-reel packaging configuration. Ensure compliance with relevant environmental directives before integration into final assemblies.
Select this component when a 60 V N-channel MOSFET with low gate charge is required for compact power stages. Evaluate thermal resistance characteristics against the PCB copper area available for heat dissipation. Compare Rds(on) specifications against alternative packages to ensure optimal efficiency within the target system constraints.
This part belongs to the Vishay PowerTrench family, designed for high-density power applications. The PowerPAK-1212-8 package provides enhanced thermal performance compared to traditional SO-8 footprints while maintaining a small board footprint suitable for modern portable electronics.
Consult official cross-reference lists for verified equivalents. Ensure substitute components match the 60 V rating, 15 A current capacity, and PowerPAK-1212-8 pinout configuration.