SI7904DN-T1-GE3

Overview

The SI7904DN-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in a PowerPAK 1212-8 surface-mount package. The device features a drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 6 A. Its maximum on-resistance (Rds(on)) is 30 mOhms at a gate-source voltage (Vgs) of 8 V. The gate threshold voltage (Vgs(th)) is specified at 1 V. Additional electrical parameters include a gate charge (Qg) of 16 nC, a fall time of 6 ns, a rise time of 60 ns, and a minimum forward transconductance of 26 S. The component supports a power dissipation (Pd) of 17.8 W and operates within a temperature range of -55 °C to +150 °C.

Feature Summary

• Dual configuration integrating two independent N-channel enhancement-mode MOSFETs into a single compact footprint.
• TrenchFET process technology designed to achieve low on-resistance for improved efficiency.
• PowerPAK 1212-8 package provides optimized thermal performance and reduced parasitic inductance.

Applications

• Low-voltage DC/DC converter circuits
• Load switching applications
• Battery protection modules

Procurement Notes

Verify the specific ordering suffix and manufacturer part number against official Vishay documentation before procurement. Confirm RoHS compliance status and REACH SVHC declarations as required by project specifications. Note that availability may vary by region and distributor. Ensure the component matches the intended design requirements regarding voltage ratings and thermal characteristics.

Selection Notes

Select this component for designs requiring a dual N-channel configuration with a 20 V rating. The 30 mOhm on-resistance at 8 V gate drive suits low-power switching needs. Compare the 17.8 W power dissipation capability against the expected thermal load. Consider the 1212-8 package dimensions for PCB layout constraints. Evaluate the 6 A current limit against peak load demands.

Part Context

This part belongs to the SI7 series of MOSFETs from Vishay Siliconix. It is a dual-channel variant distinct from single-channel models like the SI7904BDN or other voltage ratings within the same family. The PowerPAK 1212-8 package is common across various Vishay logic-level MOSFETs designed for space-constrained portable electronics.

Replacement Considerations

Check for direct pin-compatible alternatives within the Vishay portfolio. Verify that any substitute maintains the 20 V Vds and 6 A Id ratings. Ensure the replacement offers comparable Rds(on) and thermal resistance values. Confirm package compatibility with existing footprints.