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Product Detailed Parameters
- Description：MOSFET 2P-CH 40V 6A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：60mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：880pF @ 20V
- Power - Max：20.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7905DN-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology. It features a PowerPAK 1212-8 package with a maximum drain-source voltage of -40 V and a continuous drain current of -6 A at TC = 25 °C. The on-state resistance is 0.060 Ω at VGS = -10 V and -5 A, or 0.089 Ω at VGS = -4.5 V and -4 A. Total gate charge is typically 20 nC at VGS = -10 V. Maximum power dissipation reaches 20.8 W at TC = 25 °C. Operating junction temperature ranges from -55 °C to +150 °C.
Feature Summary
- Dual P-channel configuration in a compact leadless PowerPAK 1212-8 package
- TrenchFET technology for low thermal resistance and high performance
- Halogen-free construction compliant with IEC 61249-2-21 definition
Applications
- Load switching applications
Procurement Notes
Verify the specific ordering suffix GE3 to confirm halogen-free status, as the base part number may exist in non-halogen variants. Confirm availability through authorized distributors, noting that some listings indicate end-of-life status. Ensure the component matches the required RoHS directive compliance for the target assembly process.
Selection Notes
Select this component when space constraints require a small footprint alongside efficient heat dissipation. The dual channel design allows for independent control of two loads within a single package. Verify that the gate drive voltage meets the threshold requirements for the desired on-state resistance level.
Part Context
This device belongs to the Vishay Siliconix Si79 series of dual MOSFETs. It shares the PowerPAK 1212-8 package form factor with other devices in the family but differs in electrical ratings and channel configuration. The series is designed for applications requiring high density and low thermal impedance.
Replacement Considerations
Check for direct pin-compatible alternatives within the same package family. Verify that any substitute maintains the required -40 V rating and dual channel architecture. Ensure thermal characteristics are comparable to avoid derating issues.
