SI7909DN-T1-GE3

Overview

The SI7909DN-T1-GE3 is a dual P-channel MOSFET manufactured by Vishay / Siliconix. It utilizes TrenchFET technology and is housed in an SMD/SMT package. The component operates within a temperature range of -55 C to +150 C. Key electrical characteristics include a drain-source breakdown voltage (Vds) of 40 V and a continuous drain current (Id) of 8 A. The on-resistance (Rds On) is specified at 27 mOhms, with a gate-source voltage (Vgs) rating of -20 V to 20 V. The threshold voltage (Vgs th) is 1.2 V, and the total gate charge (Qg) is 63 nC. Power dissipation (Pd) is rated at 3.2 W.

Feature Summary

• Dual P-channel configuration for integrated circuit control
• TrenchFET technology for optimized performance
• Enhancement mode operation

Applications

• Low-side switching applications
• Power management circuits
• General purpose transistor arrays

Procurement Notes

Verify the specific manufacturer part number against official Vishay documentation to confirm availability status. Cross-reference datasheet revisions to ensure compatibility with design requirements. Confirm RoHS compliance details through the manufacturer's official channels before procurement.

Selection Notes

Select this component for applications requiring dual P-channel switching in a compact surface-mount form factor. Evaluate thermal management needs based on the 3.2 W power dissipation rating. Ensure gate drive voltages remain within the specified -20 V to 20 V limits to prevent device damage.

Part Context

This part belongs to the SI7 series of MOSFETs from Vishay / Siliconix. It is designed for general-purpose switching applications. The T1 suffix indicates tape and reel packaging. The GE3 suffix denotes lead-free and halogen-free construction compliant with environmental standards.

Replacement Considerations

Publicly available substitute part numbers are not confirmed in the provided source material. Consult official Vishay documentation or distributor databases for verified alternatives.