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Product Detailed Parameters
- Description：MOSFET 2P-CH 12V 4.8A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：4.8A
- Rds On (Max) @ Id, Vgs：42mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The SI7925DN-T1-E3 is a dual P-channel MOSFET array manufactured by Vishay Siliconix. It features a 12-V drain-source voltage rating and supports a continuous drain current of 4.8 A. The device utilizes the PowerPAK 1212-8 surface-mount package, which provides a compact footprint suitable for space-constrained designs. Key electrical characteristics include a maximum power dissipation of 1.3 W and low on-resistance optimized for efficient switching applications.
Feature Summary
- Dual P-channel configuration within a single integrated package
- Compact PowerPAK 1212-8 leadless surface-mount design
- Optimized for high-efficiency power switching operations
Applications
- Portable consumer electronics power management
- Battery-powered equipment load switching
- Low-voltage DC-DC converter circuits
Procurement Notes
Verify component authenticity through authorized distribution channels to ensure compliance with Vishay specifications. Confirm RoHS status and lead-free requirements against project standards. Validate package integrity upon receipt, as the leadless PowerPAK design requires careful handling during assembly. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.
Selection Notes
Select this component when a dual P-channel solution is required in a minimal footprint. The 12-V rating suits low-voltage systems, while the 4.8-A current capability handles moderate loads. Evaluate thermal performance constraints due to the 1.3-W dissipation limit. Ensure PCB layout accommodates the specific PowerPAK 1212-8 pad geometry for reliable soldering and heat dissipation.
Part Context
This part belongs to the Vishay Siliconix family of surface-mount MOSFET arrays. It integrates two independent P-channel transistors into one unit, reducing board space compared to discrete components. The PowerPAK 1212-8 package offers improved thermal performance relative to standard small-outline packages, supporting higher density designs in portable devices.
Replacement Considerations
SI7925DN-T1-GE3 serves as a verified equivalent variant within the same product line.
