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Product Detailed Parameters
- Description：MOSFET 2N-CH 12V 7.6A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：7.6A
- Rds On (Max) @ Id, Vgs：17mOhm @ 11.8A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The SI7940DP-T1-E3 is a dual N-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in a PowerPAK-SO-8 surface-mount package. The device features a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 9.6 A. The maximum on-resistance (Rds(on)) is specified at 23 mOhms when the gate-source voltage (Vgs) is 10 V. The component supports an operating temperature range from -55 °C to +150 °C and has a power dissipation rating of 3.5 W.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- TrenchFET technology for optimized performance characteristics
- PowerPAK-SO-8 package for surface-mount applications
Applications
- DC-DC converter circuits
- Load switching applications
- Power management systems
Procurement Notes
Verify the specific revision suffix and manufacturer documentation before procurement. Confirm availability status as distribution channels may vary. Ensure compliance with RoHS directives if required by the target application. Cross-reference the datasheet parameters against the specific design requirements to ensure adequate thermal and electrical margins are met.
Selection Notes
Select this component for applications requiring dual N-channel switching in a compact footprint. Evaluate the 23 mOhm on-resistance against the expected load current to determine thermal management needs. Consider the 60 V breakdown voltage relative to the system supply rails. Verify that the PowerPAK-SO-8 thermal characteristics align with the PCB layout capabilities.
Part Context
This part belongs to the Vishay Siliconix SI79xx series of dual MOSFETs. It shares the PowerPAK-SO-8 package form factor with other devices in the lineup but differs in voltage and current ratings. The series is designed for general-purpose switching applications where board space is limited.
Replacement Considerations
Check for direct pin-compatible alternatives within the same package family. Verify that substitute parts meet or exceed the 60 V Vds and 9.6 A Id specifications. Ensure the replacement maintains similar Rds(on) values to preserve efficiency.
